onsemiDatasheet (PDF)
HGTP5N120BND
IGBT NPT (Non-Punch Through) 1.2kV 21A 167W Through Hole TO-220AB
TO-220ABROHS3 CompliantActive
IGBT 1.2kV 21A TO-220AB
- Manufacturer
- onsemi
- Manufacturer part #
- HGTP5N120BND
- Store part #
- C898683
- Package / case
- TO-220AB
- Category
- Single IGBTs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
479 in stock
#C898683
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹324.02 | ₹324.02 |
| 10+ | ₹278.81 | ₹2,788.10 |
| 50+ | ₹207.01 | ₹10,350.50 |
| 100+ | ₹177.97 | ₹17,797.00 |
| 500+ | ₹164.87 | ₹82,435.00 |
| 800+ | ₹159.14 | ₹1,27,312.00 |
1 × ₹324.02
₹324.02
excl. GST
₹382.34 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
HGTP5N120BND
₹324.02 for 1 + GST
Specifications
- Td(off)
- 160ns
- Pd - Power Dissipation
- 167W
- Td(on)
- 22ns
- Current - Collector(Ic)
- 21A
- Collector-Emitter Breakdown Voltage (Vces)
- 1.2kV
- IGBT Type
- NPT (Non-Punch Through)
- Gate-Emitter Threshold Voltage (Vge(th)@Ic)
- 6V@45uA
- Operating Temperature
- -55℃~+150℃@(Tj)
- Vce Saturation(VCE(sat))
- 2.7V@5A,15V
- Reverse Recovery Time(trr)
- 65ns
- Switching Energy(Eoff)
- 450uJ
- Turn-On Energy (Eon)
- 600uJ
- Gate Charge(Qg)
- 53nC
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.2 g
Same category
More in Single IGBTs
onsemi
HGTD1N120BNS9AIGBT NPT (Non-Punch Through) 1.2kV 5.3A 60W Surface Mount TO-252AA
From
₹151.17
18,103 in stock
Hangzhou Silan Microelectronics
SGT50T65FD1PN235W 100A 650V FS (Field Stop) TO-3P-3 Single IGBTs
From
₹176.06
14,966 in stock
