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HXY MOSFETDatasheet (PDF)
HIGLR65R140D2
650V 10A 75W 160mΩ@6V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs
DFN-8(5x6)RoHSActive
GaN-on-Silicon Enhancement-mode Power Transistor
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- HIGLR65R140D2
- Store part #
- C42389175
- Package / case
- DFN-8(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
70 in stock
#C42389175
Stock & price checked 25 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹330.17 | ₹330.17 |
| 10+ | ₹280.42 | ₹2,804.20 |
| 30+ | ₹249.56 | ₹7,486.80 |
| 100+ | ₹217.61 | ₹21,761.00 |
| 500+ | ₹203.24 | ₹1,01,620.00 |
| 1,000+ | ₹197.03 | ₹1,97,030.00 |
1 × ₹330.17
₹330.17
excl. GST
₹389.60 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
HIGLR65R140D2
₹330.17 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 27pF
- Current - Continuous Drain(Id)
- 10A
- Ciss-Input Capacitance
- 83pF
- Pd - Power Dissipation
- 75W
- Technology
- E-mode
- Reverse Transfer Capacitance (Crss)
- 0.4pF
- RDS(on)
- 160mΩ@6V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 2.3nC
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.3 g
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