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HXY MOSFETDatasheet (PDF)
HSCTW35N65G2V
650V 49A 242W 49mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs
TO-247-3RoHSActive
SiC Power MOSFET N-Channel Enhancement Mode
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- HSCTW35N65G2V
- Store part #
- C42389133
- Package / case
- TO-247-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
14 in stock
#C42389133
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,013.80 | ₹1,013.80 |
| 10+ | ₹862.89 | ₹8,628.90 |
| 30+ | ₹770.86 | ₹23,125.80 |
| 90+ | ₹693.60 | ₹62,424.00 |
1 × ₹1,013.80
₹1,013.80
excl. GST
₹1,196.28 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
HSCTW35N65G2V
₹1,013.80 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 49A
- Output Capacitance(Coss)
- 190pF
- Ciss-Input Capacitance
- 1.823nF
- Pd - Power Dissipation
- 242W
- Reverse Transfer Capacitance (Crss)
- 19pF
- RDS(on)
- 49mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 96nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 4V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 6.68 g
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