MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
HSQD23N0631LT4GE3
N-Channel 60V 20A 34.7W TO-252-2L(TO-252AA)
TO-252-2L(TO-252AA)RoHSActive
MOSFET N-CH 60V 20A TO-252-2L(TO-252AA)
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- HSQD23N0631LT4GE3
- Store part #
- C42401315
- Package / case
- TO-252-2L(TO-252AA)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C42401315
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹31.53 | ₹157.65 |
| 50+ | ₹24.77 | ₹1,238.50 |
| 150+ | ₹21.86 | ₹3,279.00 |
| 500+ | ₹18.23 | ₹9,115.00 |
| 2,500+ | ₹16.63 | ₹41,575.00 |
| 5,000+ | ₹15.65 | ₹78,250.00 |
5 × ₹31.53
₹157.65
excl. GST
₹186.03 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
HSQD23N0631LT4GE3
₹157.65 for 5 + GST
Specifications
- Configuration
- Standalone
- Drain to Source Voltage
- 60V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 60pF
- Current - Continuous Drain(Id)
- 20A
- Ciss-Input Capacitance
- 1.355nF
- Pd - Power Dissipation
- 34.7W
- Reverse Transfer Capacitance (Crss)
- 49pF
- RDS(on)
- 25mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 22nC@10V
- Gate Threshold Voltage (Vgs(th))
- 1.7V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.393 g
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