MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
HUF75617D3ST-HXY
34.7W 100V 20A 80mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs
TO-252-2LRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- HUF75617D3ST-HXY
- Store part #
- C54582710
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
48 in stock
#C54582710
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹59.36 | ₹59.36 |
| 10+ | ₹46.94 | ₹469.40 |
| 30+ | ₹41.79 | ₹1,253.70 |
| 100+ | ₹35.15 | ₹3,515.00 |
| 500+ | ₹32.15 | ₹16,075.00 |
| 1,000+ | ₹30.44 | ₹30,440.00 |
1 × ₹59.36
₹59.36
excl. GST
₹70.04 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
HUF75617D3ST-HXY
₹59.36 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 60pF
- Ciss-Input Capacitance
- 1.535nF
- Pd - Power Dissipation
- 34.7W
- Operating Temperature
- -55℃~+150℃
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 20A
- Reverse Transfer Capacitance (Crss)
- 37pF
- RDS(on)
- 80mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 26.2nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.396 g
Same category
