MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HUAYIDatasheet (PDF)
HYG018N10NS1B6
375W 100V 322A 1.7mΩ@10V 1 N-channel N-Channel TO-263-6 Single FETs, MOSFETs
TO-263-6RoHSActive
N-Channel Enhancement Mode MOSFET, Current:322A, Voltage:100V
- Manufacturer
- HUAYI
- Manufacturer part #
- HYG018N10NS1B6
- Store part #
- C2827229
- Package / case
- TO-263-6
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
Out of stock
#C2827229
Stock & price checked 10 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹399.80 | ₹399.80 |
| 10+ | ₹355.30 | ₹3,553.00 |
| 30+ | ₹327.36 | ₹9,820.80 |
| 100+ | ₹289.96 | ₹28,996.00 |
| 500+ | ₹277.06 | ₹1,38,530.00 |
| 800+ | ₹271.48 | ₹2,17,184.00 |
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 800 per reel
Specifications
- Output Capacitance(Coss)
- 5.45nF
- Ciss-Input Capacitance
- 12.57nF
- Pd - Power Dissipation
- 375W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 322A
- Reverse Transfer Capacitance (Crss)
- 208pF
- RDS(on)
- 1.7mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 205nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 800 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.82 g
Same category
