MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HUAYIDatasheet (PDF)
HYG020N04NR1P
200W 40V 220A 1.9mΩ@10V 1 N-channel N-Channel TO-220FB-3L Single FETs, MOSFETs RoHS
TO-220FB-3LROHS CompliantActive
N-Channel Enhancement Mode MOSFET
- Manufacturer
- HUAYI
- Manufacturer part #
- HYG020N04NR1P
- Store part #
- C5121330
- Package / case
- TO-220FB-3L
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
200 in stock
#C5121330
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹79.31 | ₹79.31 |
| 10+ | ₹64.32 | ₹643.20 |
| 50+ | ₹54.55 | ₹2,727.50 |
| 100+ | ₹47.16 | ₹4,716.00 |
| 500+ | ₹42.81 | ₹21,405.00 |
| 1,000+ | ₹40.42 | ₹40,420.00 |
1 × ₹79.31
₹79.31
excl. GST
₹93.59 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
HYG020N04NR1P
₹79.31 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 806pF
- Ciss-Input Capacitance
- 4.392nF
- Pd - Power Dissipation
- 200W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 40V
- Current - Continuous Drain(Id)
- 220A
- Reverse Transfer Capacitance (Crss)
- 707pF
- RDS(on)
- 1.9mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 110nC@10V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 2.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 3.7 g
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