MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
IAUC100N10S5L040-HXY
176W 100V 120A 3.6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IAUC100N10S5L040-HXY
- Store part #
- C51949347
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
49 in stock
#C51949347
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹129.30 | ₹129.30 |
| 10+ | ₹106.10 | ₹1,061.00 |
| 30+ | ₹94.50 | ₹2,835.00 |
| 100+ | ₹83.12 | ₹8,312.00 |
| 500+ | ₹76.24 | ₹38,120.00 |
| 1,000+ | ₹72.59 | ₹72,590.00 |
1 × ₹129.30
₹129.30
excl. GST
₹152.57 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
IAUC100N10S5L040-HXY
₹129.30 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 592pF
- Ciss-Input Capacitance
- 4.102nF
- Pd - Power Dissipation
- 176W
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 19.8pF
- RDS(on)
- 3.6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 69nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.147 g
Overview
The IAUC100N10S5L040 utilizes advanced SGT MOSFET technology, offering low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.
Applications
- Consumer electronics power supplies
- Motor control
- Synchronous rectification
- Isolated DC
- Synchronous rectification applications
Key features
- Drain-source voltage VDS = 100 V, drain current ID = 120 A
- On-resistance RDS(ON) < 4.4 mΩ at gate-source voltage VGS = 10 V
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | NTMFSC4D2N10MC-HXY#C51949334HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 77 | ₹417.09 · 77 in stock | View |
 | NTMFS4D2N10MDT1G-HXY#C51949336HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 95 | ₹231.74 · 95 in stock | View |
 | SIR170DP-T1-RE3-HXY#C51949338HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 98 | ₹234.74 · 98 in stock | View |
 | IAUC100N10S5N040-HXY#C51949340HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 8 | ₹124.14 · 8 in stock | View |
 | SIR668DP-T1-RE3-HXY#C51949342HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 66 | ₹261.23 · 66 in stock | View |
Same category
