MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IAUCN08S7N016TATMA1
205W 80V 262A 1.5mΩ@10V 1 N-channel N-Channel PG-LHDSO-10-3 Single FETs, MOSFETs
PG-LHDSO-10-3RoHSActive
- Manufacturer
- Infineon
- Manufacturer part #
- IAUCN08S7N016TATMA1
- Store part #
- C43311524
- Package / case
- PG-LHDSO-10-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
14 in stock
#C43311524
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹580.27 | ₹580.27 |
| 10+ | ₹496.13 | ₹4,961.30 |
| 30+ | ₹446.04 | ₹13,381.20 |
| 100+ | ₹395.30 | ₹39,530.00 |
| 500+ | ₹372.09 | ₹1,86,045.00 |
| 1,000+ | ₹361.47 | ₹3,61,470.00 |
1 × ₹580.27
₹580.27
excl. GST
₹684.72 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,000 per reel
IAUCN08S7N016TATMA1
₹580.27 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 2.301nF
- Ciss-Input Capacitance
- 5.688nF
- Pd - Power Dissipation
- 205W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 262A
- Reverse Transfer Capacitance (Crss)
- 26pF
- RDS(on)
- 1.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 83nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.8V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Overview
Applications
- General automotive applications.
Key features
- OptiMOS™ power MOSFET for automotive applications
- N-channel - Enhancement mode - Normal level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 at up to 260°C peak reflow temperature
- 175°C operating temperature
- RoHS compliant
- 100% avalanche tested
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