MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
IAUCN10S7L040ATMA1-HXY
176W 100V 120A 3.6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IAUCN10S7L040ATMA1-HXY
- Store part #
- C53262922
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
57 in stock
#C53262922
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹274.48 | ₹274.48 |
| 10+ | ₹236.25 | ₹2,362.50 |
| 30+ | ₹212.20 | ₹6,366.00 |
| 100+ | ₹187.71 | ₹18,771.00 |
| 500+ | ₹176.54 | ₹88,270.00 |
| 1,000+ | ₹171.82 | ₹1,71,820.00 |
1 × ₹274.48
₹274.48
excl. GST
₹323.89 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
IAUCN10S7L040ATMA1-HXY
₹274.48 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 592pF
- Ciss-Input Capacitance
- 4.102nF
- Pd - Power Dissipation
- 176W
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 19.8pF
- RDS(on)
- 3.6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 69nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.145 g
Alternatives
Similar parts — check the datasheet before substituting.
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