MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
InfineonDatasheet (PDF)
IAUTN06S5N008TATMA1
60V 503A 358W 0.79mΩ@10V 1 N-channel N-Channel PG-HDSOP-16-1 Single FETs, MOSFETs RoHS
PG-HDSOP-16-1ROHS3 CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- IAUTN06S5N008TATMA1
- Store part #
- C20190988
- Package / case
- PG-HDSOP-16-1
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
56 in stock
#C20190988
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,336.71 | ₹1,336.71 |
| 10+ | ₹1,191.02 | ₹11,910.20 |
| 30+ | ₹1,102.16 | ₹33,064.80 |
| 100+ | ₹1,027.68 | ₹1,02,768.00 |
1 × ₹1,336.71
₹1,336.71
excl. GST
₹1,577.32 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,800 per reel
IAUTN06S5N008TATMA1
₹1,336.71 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 503A
- Output Capacitance(Coss)
- 4.16nF
- Ciss-Input Capacitance
- 20.28nF
- Pd - Power Dissipation
- 358W
- Reverse Transfer Capacitance (Crss)
- 165pF
- RDS(on)
- 0.79mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 273nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,800 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.87 g
Overview
Applications
- General automotive applications
Key features
- OptiMOS™ Power MOSFET for automotive applications
- N-channel - Enhancement mode - Normal level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1, up to 260°C peak reflow temperature
- 175°C operating temperature
- 100% avalanche tested
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