Varnitronics
IGLD65R110D2AUMA1 Infineon
Infineon

IGLD65R110D2AUMA1

650V 14A 51W 110mΩ 1 N-channel N-Channel SON-8(7x7) Single FETs, MOSFETs RoHS

SON-8(7x7)ROHS CompliantActive
Manufacturer
Infineon
Manufacturer part #
IGLD65R110D2AUMA1
Store part #
C44179918
Package / case
SON-8(7x7)
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

60 in stock

#C44179918

Stock & price checked 4 days ago

QuantityUnit pricePack price
1+₹646.03₹646.03
10+₹553.03₹5,530.30
30+₹497.62₹14,928.60
100+₹441.55₹44,155.00
500+₹415.91₹2,07,955.00
1,000+₹404.18₹4,04,180.00

1 × ₹646.03

₹646.03

excl. GST

₹762.32 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

IGLD65R110D2AUMA1

₹646.03 for 1 + GST

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Specifications

Drain to Source Voltage
650V
Operating Temperature
-55℃~+150℃
Current - Continuous Drain(Id)
14A
Output Capacitance(Coss)
29pF
Ciss-Input Capacitance
170pF
Pd - Power Dissipation
51W
Technology
E-mode
Reverse Transfer Capacitance (Crss)
0.39pF
RDS(on)
110mΩ
Number
1 N-channel
Gate Charge(Qg)
2.4nC
Type
N-Channel
Gate Threshold Voltage (Vgs(th))
1.2V

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Active
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
1.484 g

Overview

Infineon's CoolGaN is a high-efficiency GaN transistor designed for 650V power conversion. It enables higher power density, supports reduced system BOM cost, and contributes to miniaturized form factors. The product is manufactured using 200mm wafer technology and a fully automated production line, featuring tight manufacturing tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial use.

Applications

  • Industrial
  • Telecom
  • Data Center SMPS
  • Charger
  • Adapter

Key features

  • Enhancement-mode transistor
  • Ultra-fast switching speed
  • Zero reverse recovery charge
  • Reverse conduction capability
  • Low gate charge and output charge
  • Superior commutation robustness
  • 2 kV HBM ESD compliant

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