Varnitronics
IGLT65R045D2ATMA1 Infineon
Infineon

IGLT65R045D2ATMA1

650V 38A 124W 45mΩ 1 N-channel N-Channel HDSOP-16 Single FETs, MOSFETs RoHS

HDSOP-16ROHS3 CompliantActive
Manufacturer
Infineon
Manufacturer part #
IGLT65R045D2ATMA1
Store part #
C44179921
Package / case
HDSOP-16
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

24 in stock

#C44179921

Stock & price checked 4 days ago

QuantityUnit pricePack price
1+₹1,404.83₹1,404.83
10+₹1,216.68₹12,166.80
30+₹1,102.28₹33,068.40
100+₹1,006.15₹1,00,615.00

1 × ₹1,404.83

₹1,404.83

excl. GST

₹1,657.70 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 1,800 per reel

IGLT65R045D2ATMA1

₹1,404.83 for 1 + GST

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Specifications

Drain to Source Voltage
650V
Operating Temperature
-55℃~+150℃
Output Capacitance(Coss)
72pF
Current - Continuous Drain(Id)
38A
Ciss-Input Capacitance
430pF
Pd - Power Dissipation
124W
Technology
E-mode
Reverse Transfer Capacitance (Crss)
0.98pF
RDS(on)
45mΩ
Number
1 N-channel
Gate Charge(Qg)
6nC
Type
N-Channel
Gate Threshold Voltage (Vgs(th))
1.2V

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
1,800 / Reel
Sold per
Piece
Minimum order
1
Unit weight
1.5 g

Overview

Infineon's CoolGaN is a high-efficiency 650V gallium nitride (GaN) transistor designed for power conversion. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. The transistor is manufactured using 200mm (8-inch) wafer technology on a fully automated production line, featuring tight manufacturing tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial use.

Applications

  • Industrial, telecom, and data center switch-mode power supplies based on half-bridge hard-switching and soft-switching topologies (e.g., totem-pole PFC and high-frequency LLC), as well as chargers and adapters.

Key features

  • Enhancement-mode transistor
  • Ultra-fast switching
  • No reverse recovery charge
  • Capable of reverse conduction
  • Low gate and output charge
  • Superior commutation ruggedness
  • 2kV HBM ESD rating

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