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InfineonDatasheet (PDF)
IGT65R035D2ATMA1
650V 49A 167W 35mΩ 1 N-channel N-Channel PG-HSOF-8 Single FETs, MOSFETs RoHS
PG-HSOF-8ROHS CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- IGT65R035D2ATMA1
- Store part #
- C42669718
- Package / case
- PG-HSOF-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
11 in stock
#C42669718
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,550.13 | ₹1,550.13 |
| 10+ | ₹1,320.99 | ₹13,209.90 |
| 30+ | ₹1,181.33 | ₹35,439.90 |
| 100+ | ₹1,064.26 | ₹1,06,426.00 |
1 × ₹1,550.13
₹1,550.13
excl. GST
₹1,829.15 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,000 per reel
IGT65R035D2ATMA1
₹1,550.13 for 1 + GST
Specifications
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 49A
- Output Capacitance(Coss)
- 91pF
- Ciss-Input Capacitance
- 540pF
- Pd - Power Dissipation
- 167W
- Technology
- E-mode
- Reverse Transfer Capacitance (Crss)
- 1.3pF
- RDS(on)
- 35mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 7.7nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 1.2V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.74 g
Overview
Infineon's CoolGaN™ is a high-efficiency GaN transistor designed for 650V power conversion. It enables higher power density, supports reduced system BOM cost, and helps achieve compact form factors. Manufactured using 200mm wafer technology on a fully automated production line with tight production tolerances and the highest product quality, it is suitable for a wide range of applications from consumer electronics to industrial use.
Applications
- Industrial applications
- Telecom equipment
- Data center switching power supplies
- Chargers and adapters
Key features
- Enhancement-mode transistor
- Ultra-fast switching speed
- Zero reverse recovery charge
- Reverse conduction capable
- Low gate and output charge
- Excellent commutation robustness
- 2 kV HBM ESD compliant
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