InfineonDatasheet (PDF)
IKW50N60DTP
IGBT FS (Field Stop) 600V 80A 319.2W Through Hole TO-247-3
TO-247-3ROHS3 CompliantSold out at source
IGBT 600V 80A TO-247-3
- Manufacturer
- Infineon
- Manufacturer part #
- IKW50N60DTP
- Store part #
- C3191650
- Package / case
- TO-247-3
- Category
- Single IGBTs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
64 in stock
#C3191650
Stock & price checked 22 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹570.66 | ₹570.66 |
| 10+ | ₹508.98 | ₹5,089.80 |
| 30+ | ₹458.04 | ₹13,741.20 |
| 100+ | ₹418.49 | ₹41,849.00 |
| 500+ | ₹400.64 | ₹2,00,320.00 |
| 1,000+ | ₹392.92 | ₹3,92,920.00 |
1 × ₹570.66
₹570.66
excl. GST
₹673.38 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 30 per tube
IKW50N60DTP
₹570.66 for 1 + GST
Specifications
- Td(off)
- 215ns
- Pd - Power Dissipation
- 319.2W
- Td(on)
- 20ns
- Current - Collector(Ic)
- 80A
- Collector-Emitter Breakdown Voltage (Vces)
- 600V
- Reverse Transfer Capacitance (Cres)
- 67pF
- IGBT Type
- FS (Field Stop)
- Gate-Emitter Threshold Voltage (Vge(th)@Ic)
- 1.8V@15V,50A
- Operating Temperature
- -40℃~+175℃@(Tj)
- Vce Saturation(VCE(sat))
- 1.6V
- Reverse Recovery Time(trr)
- 115ns
- Switching Energy(Eoff)
- 850uJ
- Turn-On Energy (Eon)
- 1.53mJ
- Input Capacitance(Cies)
- 1.95nF
- Output Capacitance(Coes)
- 109pF
- Gate Charge(Qg)
- 249nC
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Sold out at source
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8 g
Same category
More in Single IGBTs
onsemi
HGTD1N120BNS9AIGBT NPT (Non-Punch Through) 1.2kV 5.3A 60W Surface Mount TO-252AA
From
₹151.17
18,103 in stock
Hangzhou Silan Microelectronics
SGT50T65FD1PN235W 100A 650V FS (Field Stop) TO-3P-3 Single IGBTs
From
₹176.06
14,296 in stock
