MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
InfineonDatasheet (PDF)
IMBG120R008M2HXTMA1
1.2kV 189A 800W TO-263-7
TO-263-7ROHS3 CompliantActive
SICFET 1.2kV 189A TO-263-7
- Manufacturer
- Infineon
- Manufacturer part #
- IMBG120R008M2HXTMA1
- Store part #
- C22443501
- Package / case
- TO-263-7
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
Out of stock
#C22443501
Stock & price checked 11 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹5,031.26 | ₹5,031.26 |
| 30+ | ₹4,766.76 | ₹1,43,002.80 |
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,000 per reel
Specifications
- Drain to Source Voltage
- 1.2kV
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 189A
- Output Capacitance(Coss)
- 279pF
- Ciss-Input Capacitance
- 6.38nF
- Pd - Power Dissipation
- 800W
- Reverse Transfer Capacitance (Crss)
- 24pF
- RDS(on)
- 7.7mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 195nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 4.2V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 3.8 g
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