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InfineonDatasheet (PDF)
IMBG65R020M2HXTMA1
650V 91A 326W TO-263-7
TO-263-7ROHS3 CompliantActive
SICFET 650V 91A TO-263-7
- Manufacturer
- Infineon
- Manufacturer part #
- IMBG65R020M2HXTMA1
- Store part #
- C22418014
- Package / case
- TO-263-7
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
13 in stock
#C22418014
Stock & price checked 40 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹2,139.63 | ₹2,139.63 |
| 10+ | ₹2,039.26 | ₹20,392.60 |
| 30+ | ₹1,865.03 | ₹55,950.90 |
| 100+ | ₹1,713.05 | ₹1,71,305.00 |
1 × ₹2,139.63
₹2,139.63
excl. GST
₹2,524.76 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,000 per reel
IMBG65R020M2HXTMA1
₹2,139.63 for 1 + GST
Specifications
- Configuration
- Half-Bridge
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 91A
- Output Capacitance(Coss)
- 197pF
- Ciss-Input Capacitance
- 2.038nF
- Pd - Power Dissipation
- 326W
- Reverse Transfer Capacitance (Crss)
- 11.5pF
- RDS(on)
- 24mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 57nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 5.6V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.42 g
Overview
Built on Infineon's robust 2nd generation Silicon Carbide trench technology: the 650 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever-growing system and market needs.
Applications
- SMPS
- Solar PV inverters
- Energy storage and battery formation
- UPS
- EV charging infrastructure
- Motor drives
Key features
- Ultra-low switching losses
- Benchmark gate threshold voltage, VGS(th)=4.5 V
- Robust against parasitic turn-on even with 0 V turn-off gate voltage
- Flexible driving voltage and compatible with bipolar driving scheme
- Robust body diode operation under hard commutation events
- .XT interconnection technology for best-in-class thermal performance
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | SG2M025075JJ#C52109930Sichainsemi · TO-263-7L | Sichainsemi | TO-263-7L | 48 | ₹695.14 · 48 in stock | View |
| IMBG65R010M2H#C42670689Infineon · TO-263-7 | Infineon | TO-263-7 | 3 | ₹2,900.11 · 3 in stock | View | |
| IMBG120R017M2HXTMA1#C24177597Infineon · TO-263-7 | Infineon | TO-263-7 | 1 | ₹2,956.27 · 1 in stock | View | |
 | IMBG65R015M2HXTMA1#C22955220Infineon · TO-263-7 | Infineon | TO-263-7 | 14 | ₹2,588.03 · 14 in stock | View |
 | IMBG120R012M2HXTMA1#C28441914Infineon · TO-263-7 | Infineon | TO-263-7 | 1 | ₹3,217.80 · 1 in stock | View |
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