MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IMT65R020M2HXUMA1
650V 105A 440W 24mΩ 1 N-channel N-Channel HSOF-8 Single FETs, MOSFETs RoHS
HSOF-8ROHS CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- IMT65R020M2HXUMA1
- Store part #
- C43311733
- Package / case
- HSOF-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
Out of stock
#C43311733
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,956.45 | ₹1,956.45 |
| 10+ | ₹1,895.20 | ₹18,952.00 |
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,000 per reel
Specifications
- Operating Temperature
- -55℃~+175℃
- Configuration
- Half-Bridge
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 196pF
- Current - Continuous Drain(Id)
- 105A
- Ciss-Input Capacitance
- 2.038nF
- Pd - Power Dissipation
- 440W
- Reverse Transfer Capacitance (Crss)
- 11.5pF
- RDS(on)
- 24mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 57nC
- Gate Threshold Voltage (Vgs(th))
- 5.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 4.25 g
Overview
Based on Infineon's robust 2nd generation silicon carbide trench technology, the 650 V CoolSiC MOSFET delivers outstanding performance, excellent reliability, and superior ease of use. It enables cost-effective, high-efficiency, and simplified designs to meet growing system and market demands.
Applications
- Switched-mode power supplies
- Solar PV inverters
- Energy storage and battery formation
- Uninterruptible power supplies
- EV charging infrastructure
- Motor drives
Key features
- Ultra-low switching losses
- Nominal gate threshold voltage, VGS(th) = 4.5V
- Robust immunity to parasitic turn-on even at 0V turn-off gate voltage
- Flexible drive voltage, compatible with bipolar drive schemes
- Robust body diode operation under hard commutation events
- .XT interconnect technology for best-in-class thermal performance
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