MDD(Microdiode Semiconductor)
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InfineonDatasheet (PDF)
IMT65R022M1HXUMA1
375W 650V 79A 22mΩ@18V 1 N-channel N-Channel HSOF-8-1 Single FETs, MOSFETs RoHS
HSOF-8-1ROHS3 CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- IMT65R022M1HXUMA1
- Store part #
- C5740418
- Package / case
- HSOF-8-1
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C5740418
Stock & price checked 40 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹2,086.45 | ₹2,086.45 |
| 10+ | ₹2,015.46 | ₹20,154.60 |
1 × ₹2,086.45
₹2,086.45
excl. GST
₹2,462.01 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,000 per reel
IMT65R022M1HXUMA1
₹2,086.45 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 262pF
- Ciss-Input Capacitance
- 2.288nF
- Pd - Power Dissipation
- 375W
- Operating Temperature
- -55℃~+175℃
- Configuration
- Standalone
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 79A
- Reverse Transfer Capacitance (Crss)
- 24pF
- RDS(on)
- 22mΩ@18V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 67nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 4.87 g
Overview
650 V CoolSiC™ is built on Infineon's proven SiC technology, developed over more than 20 years of research. Leveraging the properties of wide-bandgap SiC material, the 650 V CoolSiC™ MOSFET delivers a unique combination of performance, reliability, and ease of use. It is suited for high-temperature and harsh operating environments, enabling maximum system efficiency in a simple and cost-effective manner.
Applications
- Telecom and server switching power supplies
- Uninterruptible Power Supplies (UPS)
- Solar PV inverters
- EV charging infrastructure
- Energy storage and battery formation
- Class D amplifiers
Key features
- Optimized switching characteristics at higher currents
- Robust commutation fast body diode with low Qfr
- Excellent gate oxide reliability
- Maximum junction temperature Tj, max = 175°C with superior thermal performance
- Low temperature dependency of RDS(on) and pulsed current
- Enhanced avalanche capability
- Compatible with standard gate drivers
- Kelvin source reduces switching losses by up to a factor of four
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
| IPT60R028G7XTMA1#C3288780Infineon · HSOF-8 | Infineon | HSOF-8 | 13 | ₹2,131.35 · 13 in stock | View | |
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