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InfineonDatasheet (PDF)
IMT65R107M1HXUMA1
650V 26A 138W 141mΩ@18V HSOF-8-1 Single FETs, MOSFETs RoHS
HSOF-8-1ROHS3 CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- IMT65R107M1HXUMA1
- Store part #
- C20191543
- Package / case
- HSOF-8-1
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C20191543
Stock & price checked 38 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹737.03 | ₹737.03 |
| 10+ | ₹724.78 | ₹7,247.80 |
| 30+ | ₹716.39 | ₹21,491.70 |
| 100+ | ₹708.23 | ₹70,823.00 |
1 × ₹737.03
₹737.03
excl. GST
₹869.70 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,000 per reel
IMT65R107M1HXUMA1
₹737.03 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 75pF
- Current - Continuous Drain(Id)
- 26A
- Ciss-Input Capacitance
- 496pF
- Pd - Power Dissipation
- 138W
- Reverse Transfer Capacitance (Crss)
- 6.5pF
- RDS(on)
- 141mΩ@18V
- Gate Charge(Qg)
- 15nC@400V
- Gate Threshold Voltage (Vgs(th))
- 5.7V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 4.01 g
Overview
650 V CoolSiC™ is built on Infineon's mature silicon carbide technology developed over more than 20 years. Leveraging the properties of wide-bandgap SiC material, the 650 V CoolSiC™ MOSFET combines high performance, high reliability, and ease of use. It is suited for high-temperature and harsh operating conditions, enabling simplified deployment in high-efficiency systems and cost-effective applications.
Applications
- Switching Power Supplies (SMPS)
- Uninterruptible Power Supplies (UPS)
- Solar PV Inverters
- EV Charging Infrastructure
- Energy Storage and Battery Formation
- Class D Amplifiers
Key features
- Optimized switching characteristics at high current
- Robust fast body diode with low Qfr
- Excellent gate oxide reliability
- Maximum junction temperature Tj, max = 175°C with superior thermal performance
- RDS(on) and pulse current stable over temperature
- Enhanced avalanche capability
- Compatible with standard gate drivers
- Kelvin source reduces switching losses by up to 4x
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