MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IMTA65R060M2HXTMA1
650V 37A 165W 73mΩ 1 N-channel N-Channel PG-LHSOF-4 Single FETs, MOSFETs RoHS
PG-LHSOF-4ROHS CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- IMTA65R060M2HXTMA1
- Store part #
- C22670088
- Package / case
- PG-LHSOF-4
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
28 in stock
#C22670088
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹815.23 | ₹815.23 |
| 10+ | ₹700.32 | ₹7,003.20 |
| 30+ | ₹630.50 | ₹18,915.00 |
| 100+ | ₹571.96 | ₹57,196.00 |
1 × ₹815.23
₹815.23
excl. GST
₹961.97 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,000 per reel
IMTA65R060M2HXTMA1
₹815.23 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Configuration
- Half-Bridge
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 37A
- Output Capacitance(Coss)
- 65pF
- Ciss-Input Capacitance
- 669pF
- Pd - Power Dissipation
- 165W
- Reverse Transfer Capacitance (Crss)
- 4.1pF
- RDS(on)
- 73mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 18nC
- Gate Threshold Voltage (Vgs(th))
- 5.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Overview
Based on Infineon's robust 2nd generation silicon carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unmatched performance, superior reliability, and excellent ease of use. It enables cost-effective, high-efficiency, and simplified designs to meet the growing demands of systems and markets.
Applications
- Switching power supplies
- Solar PV inverters
- Energy storage and battery formation
- Uninterruptible power supplies
- EV charging infrastructure
- Motor drives
Key features
- Ultra-low switching losses
- Nominal gate threshold voltage, V_GS(th) = 4.5 V
- Robust immunity against parasitic turn-on even at 0 V turn-off gate voltage
- Flexible drive voltage, compatible with bipolar drive schemes
- Robust body diode operation under hard commutation events
- .XT interconnection technology for best-in-class thermal performance
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