MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
IMW65R030M1HXKSA1-HXY
650V 49A 242W 49mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS
TO-247ROHS CompliantActive
SiC Power MOSFET N-Channel Enhancement Mode
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IMW65R030M1HXKSA1-HXY
- Store part #
- C48972193
- Package / case
- TO-247
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
9 in stock
#C48972193
Stock & price checked 46 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,363.38 | ₹1,363.38 |
| 10+ | ₹1,176.41 | ₹11,764.10 |
| 30+ | ₹1,062.24 | ₹31,867.20 |
| 90+ | ₹966.72 | ₹87,004.80 |
1 × ₹1,363.38
₹1,363.38
excl. GST
₹1,608.79 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
IMW65R030M1HXKSA1-HXY
₹1,363.38 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 49A
- Output Capacitance(Coss)
- 190pF
- Ciss-Input Capacitance
- 1.823nF
- Pd - Power Dissipation
- 242W
- Reverse Transfer Capacitance (Crss)
- 19pF
- RDS(on)
- 49mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 96nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 4V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.117 g
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