Varnitronics
Infineon

IPA95R450PFD7XKSA1

950V 7.2A 30W 450mΩ@10V TO-220-3-313 Single FETs, MOSFETs RoHS

TO-220-3-313ROHS3 CompliantActive
Manufacturer
Infineon
Manufacturer part #
IPA95R450PFD7XKSA1
Store part #
C20191555
Package / case
TO-220-3-313
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

34 in stock

#C20191555

Stock & price checked 4 days ago

QuantityUnit pricePack price
1+₹482.54₹482.54
10+₹474.37₹4,743.70
50+₹469.00₹23,450.00
100+₹463.63₹46,363.00

1 × ₹482.54

₹482.54

excl. GST

₹569.40 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 50 per tube

IPA95R450PFD7XKSA1

₹482.54 for 1 + GST

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Specifications

Drain to Source Voltage
950V
Operating Temperature
-55℃~+150℃
Current - Continuous Drain(Id)
7.2A
Pd - Power Dissipation
30W
RDS(on)
450mΩ@10V
Gate Charge(Qg)
43nC@10V
Gate Threshold Voltage (Vgs(th))
3.5V

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tube-packed
Standard pack
50 / Tube
Sold per
Piece
Minimum order
1
Unit weight
2.718 g

Overview

The latest 950V CoolMOS PFD7 series sets a new benchmark in super junction (SJ) technology. Designed to meet the demands of lighting and industrial SMPS applications by combining best-in-class performance with state-of-the-art ease of use. Compared to the CoolMOS P7 series, the PFD7 features an integrated ultra-fast body diode suitable for resonant topologies, with the lowest reverse recovery charge (Qrr) on the market.

Applications

  • Suitable for hard-switching and soft-switching topologies
  • Optimized for LLC and ZVS topologies
  • PFC and LLC applications for lighting and industrial SMPS

Key features

  • Integrated ultra-fast body diode
  • Best-in-class reverse recovery charge Qrr
  • Best-in-class figure of merit RDS(on) * Eoss, reduced Qg, Ciss and Coss
  • Best-in-class 3V V(GS)th threshold voltage, minimum V(GS)th variation range of ±0.5V
  • Integrated fast body diode
  • Best-in-class CoolMOS quality and reliability
  • Fully optimized product portfolio
  • Best-in-class RDS(on) in through-hole (THD) and SMD packages
  • ESD protection to at least Level 2 (Human Body Model HBM)

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