MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
IPAN60R360P7S-HXY
650V 15A 52W 180mΩ@18V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs
TO-220FRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IPAN60R360P7S-HXY
- Store part #
- C52098359
- Package / case
- TO-220F
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
51 in stock
#C52098359
Stock & price checked 44 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹96.26 | ₹96.26 |
| 10+ | ₹77.53 | ₹775.30 |
| 50+ | ₹68.27 | ₹3,413.50 |
| 100+ | ₹59.01 | ₹5,901.00 |
| 500+ | ₹53.62 | ₹26,810.00 |
| 1,000+ | ₹50.60 | ₹50,600.00 |
1 × ₹96.26
₹96.26
excl. GST
₹113.59 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
IPAN60R360P7S-HXY
₹96.26 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Configuration
- Standalone
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 15A
- Output Capacitance(Coss)
- 20pF
- Ciss-Input Capacitance
- 180pF
- Pd - Power Dissipation
- 52W
- Reverse Transfer Capacitance (Crss)
- 0.9pF
- RDS(on)
- 180mΩ@18V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 11.2nC
- Gate Threshold Voltage (Vgs(th))
- 3.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.73 g
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