MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IPB019N08N3GATMA1
N-Channel 80V 180A 300W TO-263-7
TO-263-7ROHS3 CompliantActive
MOSFET N-CH 80V 180A TO-263-7
- Manufacturer
- Infineon
- Manufacturer part #
- IPB019N08N3GATMA1
- Store part #
- C3289289
- Package / case
- TO-263-7
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
76 in stock
#C3289289
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹600.73 | ₹600.73 |
| 10+ | ₹510.70 | ₹5,107.00 |
| 30+ | ₹457.11 | ₹13,713.30 |
| 100+ | ₹402.88 | ₹40,288.00 |
| 500+ | ₹377.93 | ₹1,88,965.00 |
| 1,000+ | ₹366.64 | ₹3,66,640.00 |
1 × ₹600.73
₹600.73
excl. GST
₹708.86 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,000 per reel
IPB019N08N3GATMA1
₹600.73 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 3.84nF
- Ciss-Input Capacitance
- 14.2nF
- Pd - Power Dissipation
- 300W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 80V
- Current - Continuous Drain(Id)
- 180A
- Reverse Transfer Capacitance (Crss)
- 3.84nF
- RDS(on)
- 1.9mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 206nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.96 g
Overview
This HEXFET power MOSFET cell design, specifically engineered for automotive applications, employs the latest processing technology to achieve low on-resistance per unit silicon area. Combined with the well-known fast switching speed and robust device design of HEXFET power MOSFETs, this advantage provides designers with an extremely efficient and reliable device suitable for automotive and a wide range of other applications.
Key features
- High-frequency switching and synchronous rectification
- Technology optimized for motor drive applications
- Excellent gate charge × RDS(on) figure of merit
- Ultra-low on-resistance RDS(on)
- Superior thermal resistance
- N-channel, normally-on
- 100% avalanche tested
- Lead-free plating; RoHS compliant
- JEDEC qualified for target applications
- Halogen-free per IEC61249-2-21
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
| MDES08N019RH#C51891826MagnaChip Semicon · D2PAK-7L | MagnaChip Semicon | D2PAK-7L | 781 | ₹135.48 · 781 in stock | View | |
 | IPB036N12N3GATMA1#C3279258Infineon · TO-263-7 | Infineon | TO-263-7 | 8 | ₹940.97 · 8 in stock | View |
| IPB180N08S4-02#C536574Infineon · TO-263-7 | Infineon | TO-263-7 | 756 | ₹564.96 · 756 in stock | View | |
 | STH275N8F7-6AG#C2970855ST · TO-263-7 | ST | TO-263-7 | 10 | ₹1,584.31 · 10 in stock | View |
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