MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
26,12,850 in stock
HXY MOSFETDatasheet (PDF)
IPB027N10N3GATMA1-HXY
100V 260A 379W 3.4mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs
TO-263RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IPB027N10N3GATMA1-HXY
- Store part #
- C54582557
- Package / case
- TO-263
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
24 in stock
#C54582557
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹457.24 | ₹457.24 |
| 10+ | ₹397.32 | ₹3,973.20 |
| 30+ | ₹361.67 | ₹10,850.10 |
| 100+ | ₹325.80 | ₹32,580.00 |
| 500+ | ₹309.05 | ₹1,54,525.00 |
| 800+ | ₹301.54 | ₹2,41,232.00 |
1 × ₹457.24
₹457.24
excl. GST
₹539.54 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 800 per reel
IPB027N10N3GATMA1-HXY
₹457.24 for 1 + GST
Specifications
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 260A
- Output Capacitance(Coss)
- 1.505nF
- Ciss-Input Capacitance
- 9.03nF
- Pd - Power Dissipation
- 379W
- Reverse Transfer Capacitance (Crss)
- 40pF
- RDS(on)
- 3.4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 150nC@10V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 800 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.736 g
Same category
