MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
IPB083N10N3G-VB
N-Channel 100V 85A 3.75W Surface Mount TO-263(D2Pak)
TO-263(D2PAK)RoHSActive
MOSFET N-CH 100V 85A TO-263(D2PAK)
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- IPB083N10N3G-VB
- Store part #
- C7463437
- Package / case
- TO-263(D2PAK)
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C7463437
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹182.53 | ₹182.53 |
| 10+ | ₹157.11 | ₹1,571.10 |
| 50+ | ₹107.35 | ₹5,367.50 |
| 100+ | ₹91.49 | ₹9,149.00 |
| 500+ | ₹84.54 | ₹42,270.00 |
| 1,000+ | ₹81.27 | ₹81,270.00 |
1 × ₹182.53
₹182.53
excl. GST
₹215.39 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
IPB083N10N3G-VB
₹182.53 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 665pF
- Current - Continuous Drain(Id)
- 85A
- Ciss-Input Capacitance
- 6.55nF
- Pd - Power Dissipation
- 3.75W
- Reverse Transfer Capacitance (Crss)
- 265pF
- RDS(on)
- 10mΩ@10V;23mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 160nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.228 g
Overview
Key features
- TrenchFET Power MOSFET
- 175 °C Maximum Junction Temperature
- Compliant to RoHS Directive 2002/95/EC
- N-Channel MOSFET
Alternatives
Similar parts — check the datasheet before substituting.
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