MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
IPD12CN10NGATMA1-HXY
100W 100V 70A 8.5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs
TO-252-2LRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IPD12CN10NGATMA1-HXY
- Store part #
- C51949337
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
97 in stock
#C51949337
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹139.60 | ₹139.60 |
| 10+ | ₹114.69 | ₹1,146.90 |
| 30+ | ₹102.02 | ₹3,060.60 |
| 100+ | ₹89.57 | ₹8,957.00 |
| 500+ | ₹82.26 | ₹41,130.00 |
| 1,000+ | ₹78.40 | ₹78,400.00 |
1 × ₹139.60
₹139.60
excl. GST
₹164.73 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
IPD12CN10NGATMA1-HXY
₹139.60 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 451pF
- Ciss-Input Capacitance
- 1.368nF
- Pd - Power Dissipation
- 100W
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 70A
- Reverse Transfer Capacitance (Crss)
- 12.9pF
- RDS(on)
- 8.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 31.3nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.8V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.393 g
Same category
