MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
IPD60R3K3C6-VB
N-Channel 650V 4.5A 60W Surface Mount TO-252
TO-252RoHSActive
MOSFET N-CH 650V 4.5A TO-252
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- IPD60R3K3C6-VB
- Store part #
- C18212470
- Package / case
- TO-252
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C18212470
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹73.74 | ₹73.74 |
| 10+ | ₹58.66 | ₹586.60 |
| 30+ | ₹52.07 | ₹1,562.10 |
| 100+ | ₹43.99 | ₹4,399.00 |
| 500+ | ₹40.38 | ₹20,190.00 |
| 1,000+ | ₹38.26 | ₹38,260.00 |
1 × ₹73.74
₹73.74
excl. GST
₹87.01 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
IPD60R3K3C6-VB
₹73.74 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 177pF
- Current - Continuous Drain(Id)
- 4.5A
- Ciss-Input Capacitance
- 1.417nF
- Pd - Power Dissipation
- 60W
- Reverse Transfer Capacitance (Crss)
- 7pF
- RDS(on)
- 2.1Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 48nC@10V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.418 g
Overview
Key features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
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