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HXY MOSFETDatasheet (PDF)
IPD65R660CFDBTMA1-HXY
800V 10.2A 44.4W 550mΩ@18V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs
TO-252-2LRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IPD65R660CFDBTMA1-HXY
- Store part #
- C53133892
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
19 in stock
#C53133892
Stock & price checked 44 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹170.11 | ₹170.11 |
| 10+ | ₹141.26 | ₹1,412.60 |
| 30+ | ₹125.33 | ₹3,759.90 |
| 100+ | ₹107.45 | ₹10,745.00 |
| 500+ | ₹99.49 | ₹49,745.00 |
| 1,000+ | ₹95.82 | ₹95,820.00 |
1 × ₹170.11
₹170.11
excl. GST
₹200.73 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
IPD65R660CFDBTMA1-HXY
₹170.11 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Configuration
- Standalone
- Drain to Source Voltage
- 800V
- Current - Continuous Drain(Id)
- 10.2A
- Output Capacitance(Coss)
- 19pF
- Ciss-Input Capacitance
- 89pF
- Pd - Power Dissipation
- 44.4W
- Reverse Transfer Capacitance (Crss)
- 2.3pF
- RDS(on)
- 550mΩ@18V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 6.6nC
- Gate Threshold Voltage (Vgs(th))
- 2.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.44 g
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