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InfineonDatasheet (PDF)
IPD95R450PFD7ATMA1
950V 13.3A 104W 450mΩ@10V TO-252-3 Single FETs, MOSFETs RoHS
TO-252-3ROHS3 CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- IPD95R450PFD7ATMA1
- Store part #
- C20191578
- Package / case
- TO-252-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
17 in stock
#C20191578
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹298.34 | ₹298.34 |
| 10+ | ₹293.36 | ₹2,933.60 |
| 30+ | ₹290.11 | ₹8,703.30 |
| 100+ | ₹286.85 | ₹28,685.00 |
1 × ₹298.34
₹298.34
excl. GST
₹352.04 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
IPD95R450PFD7ATMA1
₹298.34 for 1 + GST
Specifications
- Drain to Source Voltage
- 950V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 13.3A
- Output Capacitance(Coss)
- 17pF
- Ciss-Input Capacitance
- 1.23nF
- Pd - Power Dissipation
- 104W
- RDS(on)
- 450mΩ@10V
- Gate Charge(Qg)
- 43nC@10V
- Gate Threshold Voltage (Vgs(th))
- 3.5V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.59 g
Overview
The latest 950V CoolMOS PFD7 series sets a new benchmark in super junction (SJ) technology. Designed to meet the demands of lighting and industrial SMPS applications by combining best-in-class performance with state-of-the-art ease of use. Compared to the CoolMOS P7 series, the PFD7 integrates an ultra-fast body diode for use in resonant topologies with the industry's lowest reverse recovery charge (Qrr).
Applications
- Suitable for hard-switching and soft-switching topologies
- Optimized for LLC and ZVS topologies
- PFC and LLC applications in lighting and industrial SMPS
Key features
- Integrated ultra-fast body diode
- Best-in-class reverse recovery charge Qrr
- Best-in-class figure of merit RDS(on) * Eoss, reduced Qg, Ciss and Coss
- Best-in-class 3V gate-source threshold voltage V(GS)th, minimum V(GS)th variation range of ±0.5V
- Integrated fast body diode
- Best-in-class CoolMOS quality and reliability
- Fully optimized product portfolio
- Best-in-class on-state resistance RDS(on) in THD and SMD packages
- ESD protection up to at least Level 2 (Human Body Model HBM)
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