Varnitronics
IPF019N12NM6ATMA1 Infineon
Infineon

IPF019N12NM6ATMA1

120V 254A 395W 1.9mΩ@10V 1 N-channel N-Channel PG-TO263-7 Single FETs, MOSFETs RoHS

PG-TO263-7ROHS3 CompliantActive

MOSFET N-CH 120V 254A

Manufacturer
Infineon
Manufacturer part #
IPF019N12NM6ATMA1
Store part #
C20191600
Package / case
PG-TO263-7
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

40 in stock

#C20191600

Stock & price checked 41 h ago

QuantityUnit pricePack price
1+₹845.94₹845.94
10+₹727.52₹7,275.20
30+₹655.37₹19,661.10
100+₹594.74₹59,474.00

1 × ₹845.94

₹845.94

excl. GST

₹998.21 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 1,000 per reel

IPF019N12NM6ATMA1

₹845.94 for 1 + GST

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Specifications

Operating Temperature
-55℃~+175℃
Drain to Source Voltage
120V
Output Capacitance(Coss)
3.1nF
Current - Continuous Drain(Id)
254A
Ciss-Input Capacitance
11nF
Pd - Power Dissipation
395W
Reverse Transfer Capacitance (Crss)
70pF
RDS(on)
1.9mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
113nC@10V
Gate Threshold Voltage (Vgs(th))
3.6V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
1,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
2.03 g

Overview

Key features

  • N-channel, normally-on
  • Ultra-low on-resistance RDS(on)
  • Excellent gate charge × RDS(on) product (figure of merit FOM)
  • Ultra-low reverse recovery charge (Qrr)
  • High avalanche energy rating
  • Operating temperature up to 175°C
  • Optimized for high-frequency switching
  • Lead-free lead finish; RoHS compliant
  • Halogen-free per IEC61249-2-21
  • MSL 1 classified per J-STD-020

Alternatives

Similar parts — check the datasheet before substituting.

IPF026N15NM6ATMA1#C31785718Infineon · TO-263-7₹846.84 · 18 in stockView
IPF021N13NM6ATMA1#C22443514Infineon · TO263-7₹2,457.60 · 0 in stockView

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