MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
IPL60R180P6AUMA1-HXY
650V 10A 75W 160mΩ 1 N-channel N-Channel DFN-8(8x8) Single FETs, MOSFETs RoHS
DFN-8(8x8)ROHS CompliantActive
GaN-on-Silicon Enhancement-mode Power Transistor
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IPL60R180P6AUMA1-HXY
- Store part #
- C48972076
- Package / case
- DFN-8(8x8)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
8 in stock
#C48972076
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹295.54 | ₹295.54 |
| 10+ | ₹251.25 | ₹2,512.50 |
| 30+ | ₹223.55 | ₹6,706.50 |
| 100+ | ₹193.12 | ₹19,312.00 |
| 500+ | ₹180.31 | ₹90,155.00 |
| 1,000+ | ₹174.65 | ₹1,74,650.00 |
1 × ₹295.54
₹295.54
excl. GST
₹348.74 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
IPL60R180P6AUMA1-HXY
₹295.54 for 1 + GST
Specifications
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 27pF
- Current - Continuous Drain(Id)
- 10A
- Ciss-Input Capacitance
- 83pF
- Pd - Power Dissipation
- 75W
- Technology
- E-mode
- Reverse Transfer Capacitance (Crss)
- 0.4pF
- RDS(on)
- 160mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 2.3nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 1.6V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.265 g
Same category
