MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
IPL65R099C7
650V 15A 128W 99mΩ@10V 1 N-channel N-Channel VSON-4-EP(8.1x8.1) Single FETs, MOSFETs RoHS
VSON-4-EP(8.1x8.1)ROHS3 CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- IPL65R099C7
- Store part #
- C537042
- Package / case
- VSON-4-EP(8.1x8.1)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
16 in stock
#C537042
Stock & price checked 42 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,347.08 | ₹1,347.08 |
| 10+ | ₹1,323.44 | ₹13,234.40 |
| 30+ | ₹1,307.83 | ₹39,234.90 |
| 100+ | ₹1,292.00 | ₹1,29,200.00 |
1 × ₹1,347.08
₹1,347.08
excl. GST
₹1,589.55 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
IPL65R099C7
₹1,347.08 for 1 + GST
Specifications
- Operating Temperature
- -40℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 33pF
- Current - Continuous Drain(Id)
- 15A
- Ciss-Input Capacitance
- 2.14nF
- Pd - Power Dissipation
- 128W
- RDS(on)
- 99mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 45nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.325 g
Overview
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The CoolMOS C7 series combines the expertise of a leading SJ MOSFET supplier with best-in-class innovative technology. This product portfolio offers all the advantages of fast-switching SJ MOSFETs, enabling higher efficiency, lower gate charge, ease of use, and outstanding reliability.
Applications
- PFC stage and hard-switching PWM stage for computers, servers, telecommunications, UPS, and solar applications.
Key features
- Enhanced MOSFET dv/dt robustness
- Higher efficiency with best-in-class figure-of-merit RDS(on) * Eoss and RDS(on) * Qg
- ThinPAK SMD package with ultra-low parasitic inductance for fast and reliable switching, minimized footprint for improved power density
- Easy to use/drive with dedicated source pin for better gate control
- Lead-free plating, halogen-free molding compound
- Compliant with JEDEC (J-STD20 and JESD22) standards for industrial-grade applications
Alternatives
Similar parts — check the datasheet before substituting.
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