MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
IPP032N06N3G-VB
N-Channel 60V 210A 375W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 60V 210A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- IPP032N06N3G-VB
- Store part #
- C709595
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
16 in stock
#C709595
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹191.03 | ₹191.03 |
| 10+ | ₹159.49 | ₹1,594.90 |
| 50+ | ₹127.95 | ₹6,397.50 |
| 100+ | ₹108.19 | ₹10,819.00 |
| 500+ | ₹99.41 | ₹49,705.00 |
| 1,000+ | ₹95.41 | ₹95,410.00 |
1 × ₹191.03
₹191.03
excl. GST
₹225.42 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
IPP032N06N3G-VB
₹191.03 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1nF
- Ciss-Input Capacitance
- 9.3nF
- Pd - Power Dissipation
- 375W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 210A
- Reverse Transfer Capacitance (Crss)
- 750pF
- RDS(on)
- 3mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 180nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.66 g
Overview
Key features
- Halogen-free According to IEC 61249-2-2 Definition
- TrenchFET Power MOSFET
- Package with Low Thermal Resistance
- 100 % Rg and UIS Tested
- Compliant to RoHS Directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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