MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
IPP045N10N3GXKSA1-HXY
178W 100V 120A 4.1mΩ@10V 1 N-channel N-Channel TO-220C Single FETs, MOSFETs
TO-220CRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IPP045N10N3GXKSA1-HXY
- Store part #
- C53262898
- Package / case
- TO-220C
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
38 in stock
#C53262898
Stock & price checked 45 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹176.83 | ₹176.83 |
| 10+ | ₹147.47 | ₹1,474.70 |
| 50+ | ₹131.61 | ₹6,580.50 |
| 100+ | ₹113.39 | ₹11,339.00 |
| 500+ | ₹105.24 | ₹52,620.00 |
| 1,000+ | ₹101.61 | ₹1,01,610.00 |
1 × ₹176.83
₹176.83
excl. GST
₹208.66 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
IPP045N10N3GXKSA1-HXY
₹176.83 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 592pF
- Ciss-Input Capacitance
- 4.102nF
- Pd - Power Dissipation
- 178W
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 19.8pF
- RDS(on)
- 4.1mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 69nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.849 g
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