MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
IPP065N06LGAKSA1-HXY
120W 60V 80A 5.8mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs
TO-220RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IPP065N06LGAKSA1-HXY
- Store part #
- C54582759
- Package / case
- TO-220
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C54582759
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹57.25 | ₹57.25 |
| 10+ | ₹45.75 | ₹457.50 |
| 50+ | ₹40.99 | ₹2,049.50 |
| 100+ | ₹34.91 | ₹3,491.00 |
| 500+ | ₹28.84 | ₹14,420.00 |
| 1,000+ | ₹27.11 | ₹27,110.00 |
1 × ₹57.25
₹57.25
excl. GST
₹67.55 incl. 18% GST
- Dispatch in 7–10 working days
- GST invoice with every order
- Standard pack: 50 per tube
IPP065N06LGAKSA1-HXY
₹57.25 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 280.25pF
- Ciss-Input Capacitance
- 3.629nF
- Pd - Power Dissipation
- 120W
- Operating Temperature
- -55℃~+150℃
- Configuration
- Standalone
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 80A
- Reverse Transfer Capacitance (Crss)
- 228pF
- RDS(on)
- 5.8mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 80.85nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.8V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.836 g
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