Infineon

IQD020N10NM5ATMA1

100V 276A 333W 2.05mΩ@10V 1 N-channel N-Channel TSON-8 Single FETs, MOSFETs RoHS

TSON-8ROHS3 CompliantActive

MOSFET N-CH 100V 276A TSON-8

Manufacturer: Infineon
Manufacturer part #: IQD020N10NM5ATMA1
Store part #: C22462713
Package / case: TSON-8
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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62 in stock

#C22462713

Stock & price checked 3 days ago

Quantity	Unit price	Pack price
1+	₹642.67	₹642.67
10+	₹546.11	₹5,461.10
30+	₹488.98	₹14,669.40
100+	₹430.99	₹43,099.00
500+	₹404.19	₹2,02,095.00
1,000+	₹392.19	₹3,92,190.00

Quantity (min 1)

1 × ₹642.67

₹642.67

excl. GST

₹758.35 incl. 18% GST

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Standard pack: 3,000 per reel

IQD020N10NM5ATMA1

₹642.67 for 1 + GST

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Specifications

Operating Temperature: -55℃~+175℃
Drain to Source Voltage: 100V
Output Capacitance(Coss): 1.3nF
Current - Continuous Drain(Id): 276A
Ciss-Input Capacitance: 9.5nF
Pd - Power Dissipation: 333W
Reverse Transfer Capacitance (Crss): 74pF
RDS(on): 2.05mΩ@10V
Number: 1 N-channel
Gate Charge(Qg): 134nC@10V
Gate Threshold Voltage (Vgs(th)): 3.8V
Type: N-Channel

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 3,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.63 g

Overview

SNM041R9DNBQ is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for high-performance automotive DC-DC conversion, power switching, and charging circuits. The standard product SNM041R9DNBQ is RoHS compliant.