MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
IRF640PBF-HXY
200V 18A 63.7W 120mΩ@10V 1 N-channel N-Channel TO-220C Single FETs, MOSFETs
TO-220CRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- IRF640PBF-HXY
- Store part #
- C55510145
- Package / case
- TO-220C
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
23 in stock
#C55510145
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹117.73 | ₹117.73 |
| 10+ | ₹95.40 | ₹954.00 |
| 50+ | ₹84.34 | ₹4,217.00 |
| 100+ | ₹73.51 | ₹7,351.00 |
| 500+ | ₹66.79 | ₹33,395.00 |
| 1,000+ | ₹63.32 | ₹63,320.00 |
1 × ₹117.73
₹117.73
excl. GST
₹138.92 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
IRF640PBF-HXY
₹117.73 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 200V
- Current - Continuous Drain(Id)
- 18A
- Output Capacitance(Coss)
- 180pF
- Ciss-Input Capacitance
- 1.318nF
- Pd - Power Dissipation
- 63.7W
- Reverse Transfer Capacitance (Crss)
- 75pF
- RDS(on)
- 120mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 41nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 3.442 g
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