IRF6636TRPBF

The IRF6636PbF combines the latest HEXFET power MOSFET silicon technology with advanced DirectFET packaging to achieve the lowest on-resistance in a package with MICRO-8 footprint and only 0.7 mm height. When the fabrication methods and processes described in Application Note AN-1035 are followed, the DirectFET package is compatible with existing layout geometries, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques used in power applications. The DirectFET package supports dual-sided cooling to maximize thermal transfer efficiency in power systems, reducing thermal resistance by 80% compared to the previous best. The IRF6636PbF strikes a balance between low resistance and low charge while featuring ultra-low package inductance to reduce conduction and switching losses. The reduction in total losses makes this product ideal for high-efficiency DC-DC converters powering the next generation of processors operating at high frequencies. The IRF6636PbF is optimized for parameters critical to synchronous buck operation derived from 12 V bus converters, including on-resistance Rds(on) and gate charge, to minimize losses in the control FET position.

Applications

• CPU core DC-DC converter

Key features

• RoHS compliant
• Lead-free (reflow soldering up to 260°C)
• Dedicated MOSFET
• Low conduction loss
• High Cdv/dt immunity
• Low profile (<0.7mm)
• Dual-sided heat dissipation
• Compatible with existing SMT