IRF6644TRPBF

The IRF6644PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has a footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems improving previous best thermal resistance by 80%. The IRF6644PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes the device ideal for high performance isolated DC-DC converters.

Applications

• RoHS Compliant
• Lead-Free (Qualified up to 260°C Reflow)
• Application Specifies MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification
• Low Conduction Losses
• Low Profile (<0.7 mm)
• Dual Sided Cooling Compatible
• Compatible with existing Surface Mount Techniques