MDD(Microdiode Semiconductor)
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InfineonDatasheet (PDF)
IRF6775MTRPBF
89W 150V 28A 47mΩ@10V 1 N-channel N-Channel SMD Single FETs, MOSFETs RoHS
SMDROHS3 CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- IRF6775MTRPBF
- Store part #
- C495788
- Package / case
- SMD
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
91 in stock
#C495788
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹145.28 | ₹145.28 |
| 10+ | ₹141.80 | ₹1,418.00 |
| 30+ | ₹139.63 | ₹4,188.90 |
| 100+ | ₹137.25 | ₹13,725.00 |
1 × ₹145.28
₹145.28
excl. GST
₹171.43 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 4,800 per reel
IRF6775MTRPBF
₹145.28 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 193pF
- Ciss-Input Capacitance
- 1.411nF
- Pd - Power Dissipation
- 89W
- Operating Temperature
- -40℃~+150℃
- Drain to Source Voltage
- 150V
- Current - Continuous Drain(Id)
- 28A
- Reverse Transfer Capacitance (Crss)
- 40pF
- RDS(on)
- 47mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 25nC@75V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 4,800 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.358 g
Overview
This digital audio MOSFET is specifically designed for Class D audio amplifier applications. The MOSFET employs the latest processing technology to achieve low on-resistance per unit silicon area. In addition, gate charge, body diode reverse recovery, and internal gate resistance have been optimized to improve key performance parameters of Class D audio amplifiers, such as efficiency, total harmonic distortion (THD), and EMI. The IRF6775MPbF device features DirectFET packaging technology. Compared to conventional wire-bonded SOIC packages, DirectFET packaging offers lower parasitic inductance and resistance. The reduced inductance improves EMI performance by minimizing voltage ringing associated with fast current transients. When the manufacturing methods and processes described in Application Note AN-1035 are followed, the DirectFET package is compatible with existing layout geometries, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques used in power applications. The DirectFET package also supports dual-side cooling to maximize heat transfer in power systems, improving thermal resistance and power dissipation. Together, these characteristics make this MOSFET a highly efficient, robust, and reliable device for Class D audio amplifier applications.
Applications
- Switching applications
Key features
- Latest MOSFET silicon technology
- Key parameters optimized for Class D audio amplifier applications
- Low RDS(on) for improved efficiency
- Low Qg for improved THD and efficiency
- Low Qrr for improved THD and reduced EMI
- Low package stray inductance for reduced ringing and lower EMI
- Up to 250W per channel into 4Ω load in half-bridge amplifier configuration
- Dual-side cooling capable
- Compatible with existing SMT processes
- RoHS compliant, lead- and bromine-free
- Lead-free (reflow soldering up to 260℃)
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