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InfineonDatasheet (PDF)
IRF7769L1TRPBF
100V 3.5mΩ@10V 1 N-channel N-Channel MG-WDSON-11 Single FETs, MOSFETs RoHS
MG-WDSON-11ROHS3 CompliantActive
MOSFET N-CH 100V 20A MG-WDSON-11
- Manufacturer
- Infineon
- Manufacturer part #
- IRF7769L1TRPBF
- Store part #
- C537826
- Package / case
- MG-WDSON-11
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
20 in stock
#C537826
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹620.82 | ₹620.82 |
| 10+ | ₹531.29 | ₹5,312.90 |
| 30+ | ₹478.05 | ₹14,341.50 |
| 100+ | ₹424.39 | ₹42,439.00 |
| 500+ | ₹399.61 | ₹1,99,805.00 |
| 1,000+ | ₹388.31 | ₹3,88,310.00 |
1 × ₹620.82
₹620.82
excl. GST
₹732.57 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 4,000 per reel
IRF7769L1TRPBF
₹620.82 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.24nF
- Ciss-Input Capacitance
- 11.56nF
- Pd - Power Dissipation
- 3.3W;125W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 20A;124A
- Reverse Transfer Capacitance (Crss)
- 590pF
- RDS(on)
- 3.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 300nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 4,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.515 g
Overview
The IRF7769L1TRPbF combines the latest HEXFET power MOSFET silicon technology with advanced DirectFET packaging to achieve the lowest on-resistance in a package smaller than D2PAK with a height of only 0.7 mm. When following the manufacturing methods and processes described in application note AN-1035, the DirectFET package is compatible with existing layout geometries, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques used in power applications. The DirectFET package supports dual-sided cooling to maximize thermal transfer efficiency in power systems. The IRF7769L1TRPbF is optimized for high-frequency switching and synchronous rectification applications. The device's reduced total losses combined with high-level thermal performance enable high efficiency and low-temperature operation, which is critical for improving system reliability, making it an ideal choice for high-performance power converters.
Applications
- Ideal for primary switch socket in high-performance isolated converters
- Optimized for synchronous rectification
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