Varnitronics
IRF8302MTRPBF Infineon
Infineon

IRF8302MTRPBF

N-Channel 30V 31A 190A 2.8W 104W Surface Mount MG-WDSON-5

MG-WDSON-5ROHS CompliantDiscontinued

MOSFET N-CH 30V 31A 190A MG-WDSON-5

Manufacturer
Infineon
Manufacturer part #
IRF8302MTRPBF
Store part #
C537837
Package / case
MG-WDSON-5
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

6 in stock

#C537837

Stock & price checked 18 h ago

QuantityUnit pricePack price
1+₹723.35₹723.35
10+₹627.57₹6,275.70
30+₹569.21₹17,076.30
100+₹520.19₹52,019.00

1 × ₹723.35

₹723.35

excl. GST

₹853.55 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 4,800 per reel

IRF8302MTRPBF

₹723.35 for 1 + GST

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Specifications

Output Capacitance(Coss)
1.36nF
Ciss-Input Capacitance
6.03nF
Pd - Power Dissipation
2.8W;104W
Operating Temperature
-40℃~+150℃
Drain to Source Voltage
30V
Current - Continuous Drain(Id)
31A;190A
Reverse Transfer Capacitance (Crss)
560pF
RDS(on)
1.4mΩ@10V;2.2mΩ@4.5V
Number
1 N-channel
Gate Charge(Qg)
53nC@4.5V
Vgs
±20V
Gate Threshold Voltage (Vgs(th))
2.35V
Type
N-Channel

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Discontinued
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
4,800 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.34 g

Overview

The IRF8302MPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8302MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF8302MPbF has been optimized for parameters that are critical in synchronousbuck converter's Sync FET sockets.

Applications

  • CPU core DC-DC converter – synchronous FET slot for synchronous buck converter

Key features

  • RoHs Compliant and Halogen-Free
  • Integrated Monolithic Schottky Diode
  • Low Profile (<0.7 mm)
  • Dual Sided Cooling Compatible
  • Ultra Low Package Inductance
  • Optimized for High Frequency Switching
  • Ideal for CPU Core DC-DC Converters
  • Optimized for Sync. FET socket of Sync. Buck Converter
  • Low Conduction and Switching Losses
  • Compatible with existing Surface Mount Techniques
  • 100% Rg tested

Alternatives

Similar parts — check the datasheet before substituting.

IRF6727MTRPBF#C537801Infineon · MG-WDSON-5₹688.03 · 0 in stockView
NTMFS0D7N04XMT1G#C22986385onsemi · DFN-5₹220.97 · 0 in stockView

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