MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
IRF830ALPBF-VB
N-Channel 650V 4A 530W Through Hole TO-262
TO-262RoHSActive
MOSFET N-CH 650V 4A TO-262
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- IRF830ALPBF-VB
- Store part #
- C47994030
- Package / case
- TO-262
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C47994030
Stock & price checked 38 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹91.27 | ₹91.27 |
| 10+ | ₹75.19 | ₹751.90 |
| 50+ | ₹67.37 | ₹3,368.50 |
| 100+ | ₹59.32 | ₹5,932.00 |
| 500+ | ₹45.42 | ₹22,710.00 |
| 1,000+ | ₹43.04 | ₹43,040.00 |
1 × ₹91.27
₹91.27
excl. GST
₹107.70 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
IRF830ALPBF-VB
₹91.27 for 1 + GST
Specifications
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 4A
- Output Capacitance(Coss)
- 960pF
- Ciss-Input Capacitance
- 1.1nF
- Pd - Power Dissipation
- 530W
- Reverse Transfer Capacitance (Crss)
- 270pF
- RDS(on)
- 2.5Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 190nC
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.5 g
Overview
Applications
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High-speed power switching
- Hard switching and high-frequency circuits
Key features
- Low gate charge Qg, simple drive requirements
- Improved gate, avalanche, and dynamic dV/dt robustness
- Fully characterized capacitance, avalanche voltage, and current
- Low on-resistance RDS(on)
- RoHS compliant with Directive 2002/95/EC
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Similar parts — check the datasheet before substituting.
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