MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
IRFBC20LPBF-VB
N-Channel 650V 4A 60W Through Hole TO-262
TO-262RoHSActive
MOSFET N-CH 650V 4A TO-262
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- IRFBC20LPBF-VB
- Store part #
- C29779466
- Package / case
- TO-262
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C29779466
Stock & price checked 10 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹79.19 | ₹79.19 |
| 10+ | ₹63.86 | ₹638.60 |
| 50+ | ₹56.10 | ₹2,805.00 |
| 100+ | ₹48.53 | ₹4,853.00 |
| 500+ | ₹43.91 | ₹21,955.00 |
| 1,000+ | ₹41.60 | ₹41,600.00 |
1 × ₹79.19
₹79.19
excl. GST
₹93.44 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
IRFBC20LPBF-VB
₹79.19 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 177pF
- Ciss-Input Capacitance
- 800pF
- Pd - Power Dissipation
- 60W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 4A
- Reverse Transfer Capacitance (Crss)
- 7pF
- RDS(on)
- 2.5Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 50nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.2 g
Overview
Key features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
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