MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
JCS650C-O-C-N-B-VB
N-Channel 200V 35A 3.75W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 200V 35A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- JCS650C-O-C-N-B-VB
- Store part #
- C19188213
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
20 in stock
#C19188213
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹221.62 | ₹221.62 |
| 10+ | ₹189.06 | ₹1,890.60 |
| 50+ | ₹168.68 | ₹8,434.00 |
| 100+ | ₹147.67 | ₹14,767.00 |
| 500+ | ₹138.23 | ₹69,115.00 |
| 1,000+ | ₹134.23 | ₹1,34,230.00 |
1 × ₹221.62
₹221.62
excl. GST
₹261.51 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
JCS650C-O-C-N-B-VB
₹221.62 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 200V
- Output Capacitance(Coss)
- 200pF
- Current - Continuous Drain(Id)
- 35A
- Ciss-Input Capacitance
- 2.69nF
- Pd - Power Dissipation
- 3.75W
- Reverse Transfer Capacitance (Crss)
- 110pF
- RDS(on)
- 170mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 140nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 3.755 g
Overview
Applications
- Industrial
- N-Channel MOSFET
Key features
- Trench power MOSFET
- 175°C junction temperature
- New low thermal resistance package
- RoHS compliant (Directive 2002/95/EC)
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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