JSMSEMI

KSE350G-JSM

Bipolar (BJT) Transistor NPN 300V 0.5A 20W Through Hole TO-126F

TO-126FROHS CompliantActive

TRANS NPN 300V 0.5A TO-126F

Manufacturer: JSMSEMI
Manufacturer part #: KSE350G-JSM
Store part #: C18188743
Package / case: TO-126F
Category: Single Bipolar Transistors
Packaging: Box-packed

Datasheet (PDF)

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100% Authentic · 30-Day Return or Replacement · policy

1,370 in stock

#C18188743

Stock & price checked 4 days ago

Quantity	Unit price	Pack price
5+	₹26.04	₹130.20
50+	₹22.74	₹1,137.00
150+	₹21.33	₹3,199.50
1,000+	₹19.57	₹19,570.00
2,000+	₹18.77	₹37,540.00
5,000+	₹18.31	₹91,550.00

Quantity (min 5, multiples of 5)

5 × ₹26.04

₹130.20

excl. GST

₹153.64 incl. 18% GST

Need volume or a scheduled delivery? Request a quote

Dispatch in 15-18 working days
GST invoice with every order
Standard pack: 1,000 per box

KSE350G-JSM

₹130.20 for 5 + GST

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Specifications

Current - Collector Cutoff: 100uA
Collector - Emitter Voltage VCEO: 300V
Emitter-Base Voltage VEBO: 3V
DC Current Gain: 240
Pd - Power Dissipation: 20W
Current - Collector(Ic): 500mA
Configuration: Standalone
Number: 1 PNP
type: PNP
Vce Saturation(VCE(sat)): 1V

Packaging & compliance

RoHS: ROHS Compliant
Lifecycle: Active
Packaging: Box-packed
Standard pack: 1,000 / Box
Sold per: Piece
Minimum order: 5 (multiples of 5)
Unit weight: 0.82 g

Overview

- Collector-Emitter Sustaining Voltage: VCEO(SUS) = 300V (Min) - DC Current Gain: hFE = 100 (Min) @ Ic = 50mA - Low Collector Saturation Voltage: VCE(sat) = 1.0V (Max.) @ Ic = 50mA - Complement to the NPN MJE340

Applications

Designed for high voltage and general purpose applications.

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