Varnitronics
MJ11033G onsemi
onsemi

MJ11033G

120V 1000 50A PNP TO-204(TO-3) Single Bipolar Transistors RoHS

TO-204(TO-3)ROHS3 CompliantActive
Manufacturer
onsemi
Manufacturer part #
MJ11033G
Store part #
C362058
Package / case
TO-204(TO-3)
Packaging
Tray
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

100 in stock

#C362058

Stock & price checked 6 days ago

QuantityUnit pricePack price
1+₹1,779.34₹1,779.34
10+₹1,697.82₹16,978.20
30+₹1,426.62₹42,798.60
100+₹1,303.45₹1,30,345.00

1 × ₹1,779.34

₹1,779.34

excl. GST

₹2,099.62 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 100 per tray

MJ11033G

₹1,779.34 for 1 + GST

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Specifications

Vbe Saturation(VBE(sat))
4.5V
Operating Temperature
-55℃~+200℃@(Tj)
Collector - Emitter Voltage VCEO
120V
Emitter-Base Voltage VEBO
5V
DC Current Gain
1000
Pd - Power Dissipation
300W
Current - Collector(Ic)
50A
type
PNP
Vce Saturation(VCE(sat))
3.5V

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tray
Standard pack
100 / Tray
Sold per
Piece
Minimum order
1
Unit weight
13 g

Overview

High-current complementary silicon power transistors for use as output devices in complementary general-purpose amplifier applications.

Key features

  • High DC current gain — h_FE min. 1000 at I_C = 25 A DC
  • h_FE min. 400 at I_C = 50 A DC
  • Characterized to 100 A (pulsed)
  • Diode protection to rated I_C
  • Monolithic construction with built-in base-emitter shunt resistor
  • Junction temperature up to +200°C
  • Available in lead-free package

Alternatives

Similar parts — check the datasheet before substituting.

MJ11033#C480236SPTECH · TO-3₹900.38 · 20 in stockView
MJ11033G-JSM#C18221458JSMSEMI · TO-3₹206.51 · 26 in stockView
NTE2350#C5702144NTE Electronics · TO-3₹5,399.37 · 0 in stockView
MJ11033#C19093502NTE Electronics · TO-204(TO-3)₹3,775.02 · 0 in stockView

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