MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
MTP4N50-VB
N-Channel 600V 8A 170W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 600V 8A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- MTP4N50-VB
- Store part #
- C29779106
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C29779106
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹108.87 | ₹108.87 |
| 10+ | ₹87.79 | ₹877.90 |
| 50+ | ₹77.14 | ₹3,857.00 |
| 100+ | ₹66.72 | ₹6,672.00 |
| 500+ | ₹60.42 | ₹30,210.00 |
| 1,000+ | ₹57.15 | ₹57,150.00 |
1 × ₹108.87
₹108.87
excl. GST
₹128.47 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
MTP4N50-VB
₹108.87 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 600V
- Output Capacitance(Coss)
- 180pF
- Current - Continuous Drain(Id)
- 8A
- Ciss-Input Capacitance
- 1.4nF
- Pd - Power Dissipation
- 170W
- Reverse Transfer Capacitance (Crss)
- 7.1pF
- RDS(on)
- 780mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 49nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.4 g
Overview
Applications
- Switched-Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High-Speed Power Switching
Key features
- Low gate charge Qg, simple drive requirements
- Improved gate, avalanche, and dynamic dV/dt robustness
- Fully characterized capacitance, avalanche voltage, and current
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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